text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. NX2301P,215

Nexperia | NX2301P,215

Manufacturer Part #

NX2301P,215

P-Channel 20 V 120 mOhm 400 mW Surface Mount TrenchMOS FET - SOT-23

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2427
Product Specification Section
Nexperia NX2301P,215 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 120mΩ
Rated Power Dissipation: 400mW
Qg Gate Charge: 4.5nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 2A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 50ns
Rise Time: 15ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.75V
Input Capacitance: 380pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The NX2301P,215 is a P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.

Features:

  • 1.8 V RDSon rated for Low Voltage Gate Drive
  • Very fast switching
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications:

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits

 

 

 
Pricing Section
Global Stock:
12,000
USA:
12,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$810.00
USD
Quantity
Unit Price
3,000
$0.27
9,000
$0.265
15,000+
$0.26
Product Variant Information section