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Vishay | SI3493DDV-T1-GE3

Manufacturer Part #

SI3493DDV-T1-GE3

Single P-Channel 20 V 24 mOhm Surface Mount TrenchFET® Power Mosfet - TSOP-6

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2517
Product Specification Section
Vishay SI3493DDV-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 34.8nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 7.5A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 115ns
Rise Time: 20ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Input Capacitance: 1825pF
Package Style:  SC-74 (TSOP-6)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
30,000
USA:
30,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
Total
$1,170.00
USD
Quantity
Unit Price
3,000
$0.39
6,000
$0.385
12,000
$0.38
15,000+
$0.375
Product Variant Information section