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Infineon | IRLU024NPBF

Manufacturer Part #

IRLU024NPBF

Single N-Channel 55 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-251AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2519
Product Specification Section
Infineon IRLU024NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.065Ω
Rated Power Dissipation: 45W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 17A
Turn-on Delay Time: 7.1ns
Turn-off Delay Time: 20ns
Rise Time: 74ns
Fall Time: 29ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 480pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Features & Applications

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

Logic-Level Gate Drive
Straight Lead
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free

Pricing Section
Global Stock:
149,074
USA:
149,074
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
50
Multiple Of:
1
Total
$19.00
USD
Quantity
Unit Price
50
$0.38
200
$0.37
750
$0.36
2,500
$0.355
10,000+
$0.34
Product Variant Information section