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Manufacturer Part #
IRLU024NPBF
Single N-Channel 55 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-251AA
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:75 per Tube Package Style:TO-251 (IPAK) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2512 | ||||||||||
Infineon IRLU024NPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Reprocessed previous announcement issued under Future PCN 96119, to update system for replacements.Detailed change information:Subject Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#).Reason :To Reflect the Correct Environmental Flag at Production Sites for Each Product.
Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#) Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Please see MFR PCN for part number changes
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLU024NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irlu024npbf-infineon-9173884
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLU024NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irlu024npbf-infineon-9173884
Infineon IRLU024NPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.065Ω |
| Rated Power Dissipation: | 45W |
| Qg Gate Charge: | 15nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 17A |
| Turn-on Delay Time: | 7.1ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 74ns |
| Fall Time: | 29ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Input Capacitance: | 480pF |
| Package Style: | TO-251 (IPAK) |
| Mounting Method: | Through Hole |
Features & Applications
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
Logic-Level Gate Drive
Straight Lead
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole