text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRF7465TRPBF

Infineon | IRF7465TRPBF

Manufacturer Part #

IRF7465TRPBF

Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF7465TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 0.28Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 1.9A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 10ns
Rise Time: 1.2ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5.5V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 330pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,320.00
USD
Quantity
Unit Price
4,000
$0.58
8,000
$0.575
12,000+
$0.565
Product Variant Information section