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Manufacturer Part #

IRF7465TRPBF

Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2040
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 0.28Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 1.9A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 10ns
Rise Time: 1.2ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5.5V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 330pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
4,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
4000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,400.00
USD
Quantity
Web Price
4,000
$0.35
8,000
$0.33
12,000
$0.315
16,000+
$0.30