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Infineon Technologies | IR2117SPBF

Manufacturer Part #

IR2117SPBF

IR2117 Series 600 V 250 mA 20 V Supply Single High Or Low Side Driver - SOIC-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IR2117SPBF - Technical Attributes
Attributes Table
Configuration: High Side
No of Outputs: Single
Peak Output Current: 500mA
Supply Voltage-Max: 20V
Rated Power Dissipation: 0.625W
Quiescent Current: 70µA
Turn-off Delay Time: 105ns
Turn-on Delay Time: 125ns
Rise Time: 80ns
Fall Time: 40ns
Operating Temp Range: -40°C to +125°C
Package Style:  SOIC-8N
Mounting Method: Surface Mount
Features & Applications

The IR2117SPBF is a high voltage, high speed power MOSFET and IGBT driver, available in surface mount SOIC-8 package.

This device features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Undervoltage lockout
  • CMOS Schmitt-triggered inputs with pull-down
  • Output in phase with input (IR2117)
  • Also available LEAD-FREE
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
6,600
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3800
Multiple Of:
95
Total
$4,256.00
USD
Quantity
Unit Price
20
$1.19
50
$1.18
200
$1.16
500
$1.15
2,000+
$1.12
Product Variant Information section