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Manufacturer Part #
BFP740FH6327XTSA1
BFP740F: 4.7 V 30 mA Low Noise Silicon Germanium Bipolar RF Transistor - TSFP-4
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Infineon BFP740FH6327XTSA1 - Product Specification
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Status of 28 February 2023 (Update #3) On 6 January 2023, a fire incident took place at the production site of one of our manufacturing partners in Wuxi (China). Its plating lines that support our Infineon site in Wuxi were severely damaged by the fire. These circumstances are beyond our reasonable control. We are in close exchange with the affected manufacturing partner in Wuxi. The supplier will however not be able to provide services to Infineon until further notice.
**Expanded part list**Subject Change of plating production site from Wuxi Welnew Micro. Co., Ltd., Wuxi, China to Infineon Technologies (Malaysia) Sdn. Bhd., Melaka, Malaysia and Shanghai Welnew Micro. Co., Ltd., Shanghai, China due to Wuxi Welnew site burning down Reason To assure continuity of supply, plating production site will be transferred to Infineon Technologies (Malaysia) Sdn. Bhd., Melaka, Malaysia and Shanghai Welnew Microelectronic Co., Ltd., Shanghai, China
Subject Change of plating production site from Wuxi Welnew Micro. Co., Ltd., Wuxi, China to Infineon Technologies (Malaysia) Sdn. Bhd., Melaka, Malaysia and Shanghai Welnew Micro. Co., Ltd., Shanghai, China due to Wuxi Welnew site burning down Reason To assure continuity of supply, plating production site will be transferred to Infineon Technologies (Malaysia) Sdn. Bhd., Melaka, Malaysia and Shanghai Welnew Microelectronic Co., Ltd., Shanghai, China Final qualification report 2023-06-15 (for Shanghai Welnew) First samples available on request Instart of delivery 2023-02-06
Business Continuity Customer Notification Fire incident at manufacturing partner in Wuxi (China).Status of 19 January 2023 (Update #1) Dear valued customer, On 6 January 2023, a fire incident took place at the production site of one of our manufacturing partners in Wuxi (China). Its plating lines that support our Infineon site in Wuxi were severely damaged by the fire. The circumstances are beyond our reasonable control. We are in close exchange with the affected manufacturing partner. Our supplier will however not be able to provide services to Infineon until further notice. Our dedicated team immediately activated short- and mid-term mitigation plans. We quickly pursued options to shift the production of affected technologies at our manufacturing site in Wuxi to other sites within our global production network and are now implementing respective capacity shifts to minimize impact on our supply capability. Delivery plans are currently being updated and affected customers have been informed individually through the established channels. We are working diligently on resolving the critical supply situation and expect to resume delivery by mid February 2023. We apologize for any inconvenience as a result of this incident.
With this Infineon Technologies AG information note, we would like to inform you about the following:Detailed change information: Subject:Early Problem Notification: Burning down of plating production site Wuxi Welnew Microelectronic Co., Ltd., Wuxi, China affecting Infineon's products in packages P-/PG-SC74*, -SOD323*, - SOT143*, -SOT23*, and PG-SC79*, -SOT223*, -SOT323*, - SOT343*, -SOT363*, -SOT89*, -TDSON*, -TSFP*, -TSSOP* *: accompanied by different numbers of leads and version, for detailed info, please use affected product list as attached. Reason: On 6 January 2023, a fire incident took place at the production site of one of our manufacturing partners "Wuxi Welnew Microelectronic Co., Ltd., Wuxi, China". Its plating lines which support our Infineon site in Wuxi (Infineon Technologies (Wuxi) Co., Ltd., Wuxi, China) were severely damaged by the fire. Our manufacturing partner will not be able to provide services to Infineon until further notice.
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=BFP740FH6327XTSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/en/p/discretes--transistors--bipolar-transistors/bfp740fh6327xtsa1-infineon-3097449
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=BFP740FH6327XTSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/en/p/discretes--transistors--bipolar-transistors/bfp740fh6327xtsa1-infineon-3097449
Infineon BFP740FH6327XTSA1 - Technical Attributes
| Polarity: | NPN |
| Type: | RF |
| CE Voltage-Max: | 4V |
| Collector Current Max: | 45mA |
| Power Dissipation-Tot: | 160mW |
| Collector - Base Voltage: | 13V |
| Emitter - Base Voltage: | 1.2V |
| DC Current Gain-Min: | 160 |
| Collector - Current Cutoff: | 40nA |
| Configuration: | Single |
| Frequency - Transition: | 45GHz |
| Noise Figure: | 1.5dB |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Mounting Method:
Surface Mount