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Manufacturer Part #

MJD210RLG

MJD210RLG Series 25 V 5 A PNP Complementary Plastic Power Transistor - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2416
Product Specification Section
onsemi MJD210RLG - Technical Attributes
Attributes Table
Polarity: PNP
Type: Power Transistor
CE Voltage-Max: 25V
Collector Current Max: 5A
Power Dissipation-Tot: 12.5W
DC Current Gain-Min: 45
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The MJD210RLG is a part of MJD series PNP Bipolar Power Transistor. It has a storage temperature ranging from -65°C to +150°C and its available in TO-252-3 package.

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Features:

  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
    • 45 (Min) @ IC = 2 Adc
    • 10 (Min) @ IC = 5 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • Straight Lead Version in Plastic Sleeves
  • Lead Formed Version in 16 mm Tape and Reel
  • High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
5,400
Factory Lead Time:
26 Weeks
Minimum Order:
3600
Multiple Of:
1800
Total
$1,062.00
USD
Quantity
Unit Price
1,800
$0.30
3,600
$0.295
5,400+
$0.29
Product Variant Information section