text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSC0911NDATMA1

Infineon Technologies | BSC0911NDATMA1

Manufacturer Part #

BSC0911NDATMA1

Dual N-Channel 25 V 3.2/1.2 mOhm 7.7/25 nC OptiMOS™ Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies BSC0911NDATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 3.2mΩ/1.2mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 7.7nC/25nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$4,075.00
USD
Quantity
Unit Price
5,000+
$0.815
Product Variant Information section