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Manufacturer Part #

DMC3021LSDQ-13

Dual N/P-Channel 30 V 32 /53 mOhm 7.8/10.1 nC 2.5 W Silicon Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMC3021LSDQ-13 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -30V/30V
Drain-Source On Resistance-Max: 32mΩ/53mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 7.8nC/10.1nC
Gate-Source Voltage-Max [Vgss]: -20V/20V
Drain Current: -7A/8.5A
Turn-on Delay Time: 5ns/10.1ns
Turn-off Delay Time: 26.3ns/50.1ns
Rise Time: 4.5ns/6.5ns
Fall Time: 8.55ns/22.2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -2.1V/2.2V
Technology: Si
Height - Max: 1.75mm
Length: 4.95mm
Input Capacitance: 767pF/1002pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Total
$1,587.50
USD
Quantity
Unit Price
2,500
$0.635
5,000
$0.625
7,500
$0.62
12,500+
$0.61
Product Variant Information section