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Diodes Incorporated | DMN1019UVT-7

Manufacturer Part #

DMN1019UVT-7

DMN1019 Series 12 V 10.7 A N-Channel Enhancement Mode Mosfet - TSOT-26

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2616
Product Specification Section
Diodes Incorporated DMN1019UVT-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 10mΩ
Rated Power Dissipation: 1.73W
Qg Gate Charge: 50.4nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 10.7A
Turn-on Delay Time: 4.7ns
Turn-off Delay Time: 32.2ns
Rise Time: 3.7ns
Fall Time: 11.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.53V
Input Capacitance: 2588pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,200.00
USD
Quantity
Unit Price
3,000
$0.40
6,000
$0.395
12,000
$0.39
15,000+
$0.385
Product Variant Information section