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Diodes Incorporated | DMN3135LVT-7

Manufacturer Part #

DMN3135LVT-7

Single N-Channel 30 V 100 mOhm 4.1 nC 1.27 W Silicon SMT Mosfet - TSOT-26

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3135LVT-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 0.84W
Qg Gate Charge: 9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.5A
Turn-on Delay Time: 2.6ns
Turn-off Delay Time: 13.1ns
Rise Time: 4.6ns
Fall Time: 2.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Input Capacitance: 305pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Total
$1,485.00
USD
Quantity
Unit Price
3,000
$0.495
6,000
$0.49
9,000
$0.485
15,000+
$0.475
Product Variant Information section