text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. FDC6312P

onsemi | FDC6312P

Manufacturer Part #

FDC6312P

Dual P-Channel 20V 115 mOhm 1.8V PowerTrench Specified Mosfet SSOT-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDC6312P - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 115mΩ
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 7nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC6312P is a 20V 115 mOhm Dual P-Channel 1.8V PowerTrench Specified Mosfet in a SSOT-6 package .

These P-Channel 1.8 V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Product Features :

  • –2.3 A, –20 V.
  • RDS(ON) = 115 mΩ @ VGS = –4.5 V
  • RDS(ON) = 155 mΩ @ VGS = –2.5 V
  • RDS(ON) = 225 mΩ @ VGS = –1.8 V
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) 

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
6,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,140.00
USD
Quantity
Unit Price
3,000
$0.38
6,000
$0.375
9,000
$0.37
15,000+
$0.365
Product Variant Information section