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Manufacturer Part #
FDC6312P
Dual P-Channel 20V 115 mOhm 1.8V PowerTrench Specified Mosfet SSOT-6
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:3000 per Reel Package Style:SSOT-6 Mounting Method:Surface Mount |
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| Date Code: | 2533 | ||||||||||
onsemi FDC6312P - Product Specification
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onsemi FDC6312P - Technical Attributes
| Fet Type: | Dual P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 115mΩ |
| Rated Power Dissipation: | 0.7|W |
| Qg Gate Charge: | 7nC |
| Package Style: | SSOT-6 |
| Mounting Method: | Surface Mount |
Features & Applications
The FDC6312P is a 20V 115 mOhm Dual P-Channel 1.8V PowerTrench Specified Mosfet in a SSOT-6 package .
These P-Channel 1.8 V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Product Features :
- –2.3 A, –20 V.
- RDS(ON) = 115 mΩ @ VGS = –4.5 V
- RDS(ON) = 155 mΩ @ VGS = –2.5 V
- RDS(ON) = 225 mΩ @ VGS = –1.8 V
- High performance trench technology for extremely low RDS(ON)
- SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
Applications :
- AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
- External AC-DC Merchant Power Supply - Wireless Communications
- Wireless LAN Card & Broadband Access
- Medical Electronics/Devices
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SSOT-6
Mounting Method:
Surface Mount