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onsemi | FDC645N

Manufacturer Part #

FDC645N

N-Channel 30 V 26 mOhm Surface Mount PowerTrench Mosfet - SSOT-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDC645N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 26mΩ
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 13nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC645N is a 30 V 30 mΩ PowerTrench N-Channel Mosfet available in a  SSOT-6 Package .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventionalswitching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features:

  • 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V
  • RDS(ON) = 26 mΩ @ VGS = 10 V
  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (13 nC typical)
  • High power and current handling capability

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,290.00
USD
Quantity
Unit Price
3,000
$0.43
6,000
$0.425
12,000
$0.42
15,000+
$0.415
Product Variant Information section