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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMW120R045M1XKSA1

Infineon | IMW120R045M1XKSA1

Manufacturer Part #

IMW120R045M1XKSA1

IMW120 Series 1200V 59mOhm 52 nC N-Channel SiC CoolSiC™ Trench MOSFET - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2343
Product Specification Section
Infineon IMW120R045M1XKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 52A
Input Capacitance: 1900pF
Power Dissipation: 228W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Features & Applications

Infineon Technologies has announced that it has begun volume production of discrete 1,200V CoolSiC™ MOSFET devices in a TO247 package, with on-resistance ratings ranging from 30mΩ to 350mΩ.

APPLICATIONS
• Solar inverters
• Battery charging infrastructure
• Energy storage solutions
• Uninterruptible power supplies
• Motor drives
• Data center and telecoms power supplies

FEATURES
• Low device capacitance
• Temperature-independent switching losses
• Integral diode with low reverse-recovery charge
• Threshold-free on-state characteristics

Pricing Section
Global Stock:
15
USA:
15
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3
Multiple Of:
1
Total
$24.57
USD
Quantity
Unit Price
3
$8.19
15
$8.10
50
$8.04
150
$7.98
500+
$7.85
Product Variant Information section
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Article
2022-07-28
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