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Infineon Technologies | IPB107N20N3GATMA1

Manufacturer Part #

IPB107N20N3GATMA1

Single N-Channel 200 V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IPB107N20N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 10.7mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 65nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$8,190.00
USD
Quantity
Unit Price
1,000+
$8.19
Product Variant Information section