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Infineon Technologies | IPP045N10N3GXKSA1

Manufacturer Part #

IPP045N10N3GXKSA1

Single N-Channel 100V 4.5 mOhm 88 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2326
Product Specification Section
Infineon Technologies IPP045N10N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 214W
Qg Gate Charge: 88nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 137A
Turn-on Delay Time: 27ns
Turn-off Delay Time: 48ns
Rise Time: 59ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.7V
Technology: OptiMOS
Input Capacitance: 6320pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$1,790.00
USD
Quantity
Unit Price
500
$3.58
1,000
$3.55
1,500
$3.53
2,000
$3.52
2,500+
$3.48
Product Variant Information section