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Manufacturer Part #

IPP048N12N3GXKSA1

Single N-Channel 120 V 4.8 mOhm 137 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP048N12N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 137nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$810.00
USD
Quantity
Unit Price
500
$1.62
1,000
$1.61
1,500
$1.60
2,500+
$1.58
Product Variant Information section