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Infineon | IRF4104PBF

Manufacturer Part #

IRF4104PBF

Single N-Channel 40 V 5.5 mOhm 100 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF4104PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 5.5mΩ
Rated Power Dissipation: 140W
Qg Gate Charge: 100nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 38ns
Rise Time: 130ns
Fall Time: 77ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 3000pF
Package Style:  TO-220-3 (TO-220AB)
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
50
Total
$630.00
USD
Quantity
Unit Price
50
$0.665
250
$0.645
1,000
$0.63
2,500
$0.62
6,250+
$0.60
Product Variant Information section