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Infineon Technologies | IRF4905LPBF

Manufacturer Part #

IRF4905LPBF

Single P-Channel 55 V 20 mOhm 180 nC HEXFET® Power Mosfet - TO-262-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF4905LPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 170W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 70A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 51ns
Rise Time: 99ns
Fall Time: 64ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 3500pF
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,420.00
USD
Quantity
Unit Price
50
$1.46
200
$1.44
750
$1.42
1,500
$1.41
3,750+
$1.38
Product Variant Information section