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Infineon | IRFB3207PBF

Manufacturer Part #

IRFB3207PBF

Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFB3207PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 260nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 170A
Turn-on Delay Time: 29ns
Turn-off Delay Time: 68ns
Rise Time: 120ns
Fall Time: 74ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.02mm
Length: 10.66mm
Input Capacitance: 7600pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,410.00
USD
Quantity
Unit Price
1
$1.48
40
$1.46
150
$1.44
750
$1.41
2,500+
$1.38
Product Variant Information section