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Manufacturer Part #

SI4062DY-T1-GE3

N-Channel 60 V 4.2 mOhm 7.8 W SMT TrenchFET Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI4062DY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 3.5W
Qg Gate Charge: 40nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21.5A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 34ns
Rise Time: 6ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.6V
Input Capacitance: 3175pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
33 Weeks
Minimum Order:
5000
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,250.00
USD
Quantity
Unit Price
2,500
$0.66
5,000
$0.65
10,000
$0.645
12,500+
$0.635
Product Variant Information section