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Manufacturer Part #

SI4174DY-T1-GE3

N-CH MOSFET SO-8 BWL 30V 10MOHM @10V- LEAD(PB) AND HALOGEN FREE

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI4174DY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.013Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 17A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 35ns
Rise Time: 24ns
Fall Time: 18ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 985pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$987.50
USD
Quantity
Unit Price
2,500
$0.395
5,000
$0.39
7,500
$0.385
12,500+
$0.375
Product Variant Information section