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Vishay | SI7852DP-T1-E3

Manufacturer Part #

SI7852DP-T1-E3

N-Channel 80 V 7.6 A 16.5 Ohm 1.9 W Surface Mount Power MOSFET - PowerPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2352
Product Specification Section
Vishay SI7852DP-T1-E3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 0.0165Ω
Rated Power Dissipation: 1.9W
Qg Gate Charge: 41nC
Drain Current: 1µA
Turn-on Delay Time: 25ns
Turn-off Delay Time: 60ns
Rise Time: 17ns
Fall Time: 45ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: TrenchMOS
Input Capacitance: 250pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Features & Applications
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors.  The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.The Si7852DP features a new low thermal resistance PowerPAK® and TrenchFET® Power MOSFET Technology. This 80V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 16.5 milliohms at a 80-V gate drive voltage. Specifically designed as a primary side switch for DC/DC applications.
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Total
$3,510.00
USD
Quantity
Unit Price
3,000
$1.17
6,000+
$1.16
Product Variant Information section