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Manufacturer Part #
SIHF30N60E-GE3
E Series N Channel 600 V 0.125 Ω 130 nC Flange Mount Power Mosfet - TO-220FP
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:TO-220FP (TO-220FPAB) Mounting Method:Flange Mount |
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Vishay SIHF30N60E-GE3 - Product Specification
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PCN Information:
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
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Vishay SIHF30N60E-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.125Ω |
| Rated Power Dissipation: | 37|W |
| Qg Gate Charge: | 130nC |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Flange Mount |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220FP (TO-220FPAB)
Mounting Method:
Flange Mount