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Manufacturer Part #

SIS862DN-T1-GE3

N-Channel 60 V 8.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK 1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIS862DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 8.5mΩ
Rated Power Dissipation: 3.7W
Qg Gate Charge: 20.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 15.5A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 15ns
Rise Time: 110ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.6V
Input Capacitance: 1320pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
33 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,485.00
USD
Quantity
Unit Price
3,000
$0.495
6,000
$0.49
9,000
$0.485
15,000+
$0.475
Product Variant Information section