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Manufacturer Part #

SISA24DN-T1-GE3

N-Channel 25 V 1.4 mOhm 52 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SISA24DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.4mΩ
Rated Power Dissipation: 3.7W
Qg Gate Charge: 36.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 38.3A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 18ns
Rise Time: 23ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.1V
Input Capacitance: 2650pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$8,340.00
USD
Quantity
Unit Price
3,000+
$1.39
Product Variant Information section