Manufacturer Part #
CY62158EV30 Series 8 Mb (1024 K x 8) 2.2 - 3.6 V 45 ns Static RAM - TSOP II-44
|Standard Pkg:|| |
Product Variant Information section
135 per Tray
Description of Change: Cypress announces the qualification of UMC's 65nm (No. 3, Li-Hsin 2nd Rd., Hsinchu Science Park, Hsinchu, Taiwan, R.O.C.) as an alternate wafer fab site for select 90nm 1.65V - 3.6V industrial grade 8Mb MoBLTM products. The 65nm products are drop-in replacement parts and form, fit, and function compatible with the 90nm 8Mb Async MoBLTM SRAM products manufactured at SkyWater, Minnesota. There are some updates to certain DC specifications, including a revision in the VCC operating supply current at f = 1MHz (ICC) at 85�C from 3mA to 7mA and data retention current (ICCDR) at 85�C from 5?A to 8?A for the 3.0V device and from 3?A to 9?A for the 1.8V device. The updated product datasheets are attached to this notification and can be downloaded from the Cypress Website (www.cypress.com). There is no change to the existing marketing part numbers. Benefit of Change: Qualification of alternate manufacturing sites and technologies is part of Cypress' ongoing flexible manufacturing initiative. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions.
Addendum to PIN195102 - Manufacturing Label and Packing Configuration Standardization Description of Change: The purpose of this addendum is to correct the date from January 20, 2019 to January 20, 2020, in the "3rd paragraph in the 'Description of Change' section. This notification is to inform customers that Cypress will be standardizing its manufacturing labels and tray/tube packing configuration. It may be recalled that the Cypress entity consolidation (following the merger with Spansion Corp) was announced via Product Information Notification PIN174801 in November 2017. As the next phase of the entity consolidation process, Cypress will be adapting a new manufacturing label format for all products and revising shipping configurations for select product shipped in trays and tubes.
|Memory Organization:||1 M x 8|
|Supply Voltage-Nom:||2.2V to 3.6V|
|Package Style:||TSOP II-44|
|Mounting Method:||Surface Mount|
Features & Applications
The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption significantly when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW).
Please see datasheets for additional information.The CY62158EV30LL-45ZSXI is a 8-Mbit (1024K x 8) Static RAM, 45 ns speed, 44-pin TSOP II (Pb-free), industrial temp.
135 per Tray