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STMicroelectronics | STPSC406B-TR

Manufacturer Part #

STPSC406B-TR

STPSC406B Series 600 V 4 A Power Schottky Silicon Carbide Diode - TO-252

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STPSC406B-TR - Technical Attributes
Attributes Table
Average Rectified Current-Max: 4A
Peak Current-Max: 14A
Reverse Voltage-Max [Vrrm]: 600V
Reverse Current-Max: 50µA
Forward Voltage: 1.55V
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STPSC406B-TK is a SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.

Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

Features:

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC boost diode
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
19 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,812.50
USD
Quantity
Unit Price
2,500+
$0.725
Product Variant Information section