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Manufacturer Part #

BFU710F,115

BFU710 Series NPN 5.5 V 10 mA Silicon Germanium RF Transistor - SOT-343F-4

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP BFU710F,115 - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 2.8V
Collector Current Max: 10mA
Power Dissipation-Tot: 136mW
Collector - Base Voltage: 10V
Emitter - Base Voltage: 1V
DC Current Gain-Min: 200
Collector - Current Cutoff: 100nA
Configuration: Single
Frequency - Transition: 43GHz
Noise Figure: 1.45dB
Moisture Sensitivity Level: 1
Package Style:  SOT-343F-4
Mounting Method: Surface Mount
$Features & Applications

The BFU710F Series is a NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features:

  • Low noise high gain microwave transistor
  • Noise figure (NF) = 1.45 dB at 12 GHz
  • High maximum power gain 14 dB at 12 GHz
  • 110 GHz fT silicon germanium technology

Applications:

  • 2nd LNA stage and mixer stage in DBS LNB’s
  • Low noise amplifiers for microwave communications systems
  • Ka band oscillators DRO’s
  • Low current battery equipped applications
  • Microwave driver / buffer applications
  • GPS
  • RKE
  • AMR
  • ZigBee
  • FM radio
  • Mobile TV
  • Bluetooth

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$1,188.00
USD
Quantity
Web Price
3,000
$0.20
6,000
$0.198
9,000
$0.196
12,000
$0.194
15,000+
$0.189
Product Variant Information section