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STMicroelectronics | MJD122T4

Manufacturer Part #

MJD122T4

MJD122 Series NPN 100 V 8 A Complementary Power Darlington Transistor - TO-252-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2527
Product Specification Section
STMicroelectronics MJD122T4 - Technical Attributes
Attributes Table
Polarity: NPN
Type: Darlington
CE Voltage-Max: 100V
Collector Current Max: 8A
Power Dissipation-Tot: 20W
DC Current Gain-Min: 1000
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The MJD122T4 device ia manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Features:

  • Low collector-emitter saturation voltage
  • Integrated antiparallel collector-emitter diode

Applications:

  • General purpose linear and switching
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
5000
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,075.00
USD
Quantity
Unit Price
2,500
$0.215
7,500+
$0.21
Product Variant Information section