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onsemi | MJD122T4G

Manufacturer Part #

MJD122T4G

MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
onsemi MJD122T4G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Darlington
CE Voltage-Max: 100V
Collector Current Max: 8A
Power Dissipation-Tot: 1.75W
DC Current Gain-Min: 1000
Package Style:  TO-252-3 (DPAK)
Mounting Method: Tab Mount
Features & Applications
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.

Features:

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
  • Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistors
  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Complementary Pairs Simplifies Designs
  • Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
5000
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,475.00
USD
Quantity
Unit Price
2,500
$0.305
5,000+
$0.295
Product Variant Information section
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