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Référence fabricant

MJD200T4G

MJD Series 25 V Tab Mount NPN Complementary Plastic Power Transistor TO-252-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2527
Product Specification Section
onsemi MJD200T4G - Caractéristiques techniques
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 25V
Collector Current Max: 5A
Power Dissipation-Tot: 1.4W
DC Current Gain-Min: 70
Style d'emballage :  TO-252-3 (DPAK)
Fonctionnalités et applications
The MJD200T4G is a Complementary Plastic Power Transistor, Available in a TO-252 package.

Features:

  • Collector−Emitter Sustaining Voltage:
    • VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain:
    • hFE = 70 (Min) @ IC = 500 mAdc
    • hFE = 45 (Min) @ IC = 2 Adc
    • hFE = 10 (Min) @ IC = 5 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Low Collector−Emitter Saturation Voltage −
    • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    • VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current−Gain − Bandwidth Product:
    • fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage:
    • ICBO = 100 nAdc @ Rated VCB
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • ESD Ratings:
    • Human Body Model, 3B > 8000 V
    • Machine Model, C > 400 V
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These are Pb−Free Packages

Applications:

  • Audio Amplifiers
Pricing Section
Stock global :
2 500
États-Unis:
2 500
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
27 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
432,50 $
USD
Quantité
Prix unitaire
2 500
$0.173
5 000
$0.171
7 500
$0.17
10 000+
$0.168
Product Variant Information section