MJE15030G in Tube by onsemi | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

MJE15030G

MJE Series 120 V 8 A NPN Complementary Silicon Plastic Power Transistor TO-220AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2447
Product Specification Section
onsemi MJE15030G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 120V
Collector Current Max: 8A
Power Dissipation-Tot: 2W
DC Current Gain-Min: 40
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.

Features:  

  • DC Current Gain Specified to 4.0 Amperes
    • hFE = 40 (Min) @ IC = 3.0 Adc
    • hFE = 20 (Min) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage
    • VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029
    • VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031
  • High Current Gain - Bandwidth Product
    • fT = 30 MHz (Min) @ IC = 500 mAdc
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
Read More...
Pricing Section
Global Stock:
0
USA:
0
900
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.65
USD
Quantity
Unit Price
1
$0.65
40
$0.635
150
$0.615
400
$0.605
1,500+
$0.575
Product Variant Information section