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onsemi | MJE253G

Manufacturer Part #

MJE253G

MJE Series 100 V 5 A PNP Complementary Silicon Power Plastic Transistor - TO-225

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi MJE253G - Technical Attributes
Attributes Table
Polarity: PNP
Type: Power Transistor
CE Voltage-Max: 100V
Collector Current Max: 4A
Power Dissipation-Tot: 1.5W
DC Current Gain-Min: 40
Package Style:  TO-225 (TO-126, SOT-32)
Mounting Method: Through Hole
Features & Applications

The MJE253G is a Complementary Silicon Power Plastic Transistor with Collector-Emitter Voltage of 100 V, available in a TO-225 package.

Features:

  • High Collector-Emitter Sustaining Voltage -VCEO(sus) = 100 Vdc (Min)
  • High DC Current Gain @ IC = 200 mAdc
    • hFE = 40-200
    • hFE = 40-120
  • Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    • ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available

Applications:

  • Switching Applications
  • Audio amplifiers

View the List of available MJE2 Series of Bipolar Transistors

Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
2500
Multiple Of:
500
Total
$600.00
USD
Quantity
Unit Price
500
$0.25
1,000
$0.245
2,000
$0.24
7,500+
$0.235
Product Variant Information section