onsemi | MJL4281AG

The MJL4281A and MJL4302A Bipolar Complementary Audio Power Transistors are PowerBase power transistors for high power audio.

Key Features:

• 350 V Collector−Emitter Sustaining Voltage
• Gain Complementary:
• Gain Linearity from 100 mA to 5 A
• High Gain − 80 to 240
• hFE = 50 (min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area − 1.0 A / 100 V @ 1 Second
• High fT
• Pb−Free Packages are Available

Applications:

• The MJL4281A and MJL4302A Bipolar Complementary Audio Power Transistors are PowerBase power transistors for high power audio

Note:

• Maximum ratings are those values beyond which device damage can occur
• Maximum ratings applied to the device are individual stress limit values (not
  normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected
  • Example: Pulse Test:- Pulse Width = 5 ms, Duty Cycle < 10%