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Infineon Technologies | FF1400R12IP4BOSA1

Manufacturer Part #

FF1400R12IP4BOSA1

FF1400R12IP4 Series 1200 V 1400 A 765 W Half Bridge Dual IGBT Module

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies FF1400R12IP4BOSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Power Dissipation-Tot: 7.65kW
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 2800A
Collector - Emitter Saturation Voltage: 1.75V
Turn-on Delay Time: 0.2µs
Turn-off Delay Time: 0.87µs
Qg Gate Charge: 9600nC
Leakage Current: 400nA
Input Capacitance: 82nF
Operating Temp Range: -40°C to +150°C
No of Terminals: 11
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
2
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
2
Multiple Of:
2
Total
$2,746.68
USD
Quantity
Unit Price
2
$1,373.34
4
$1,351.19
6+
$1,329.39
Product Variant Information section