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Infineon Technologies | IKW75N65EL5XKSA1

Manufacturer Part #

IKW75N65EL5XKSA1

IKW75N65EL5 Series 650 V 80 A 536 W Through Hole IGBT - TO-247-3

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Mfr. Name: Infineon Technologies
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Product Variant Information section
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Product Specification Section
Infineon Technologies IKW75N65EL5XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 536W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 300A
Collector - Emitter Saturation Voltage: 1.1V
Turn-on Delay Time: 40ns
Turn-off Delay Time: 275ns
Qg Gate Charge: 436nC
Reverse Recovery Time-Max: 114ns
Leakage Current: 100nA
Input Capacitance: 12100pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
120
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
4
Multiple Of:
1
Total
$29.16
USD
Quantity
Unit Price
4
$7.29
20
$7.22
50
$7.17
200
$7.11
500+
$7.01
Product Variant Information section