Manufacturer Part #
STGB15M65DF2
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount |
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| Date Code: | 2532 | ||||||||||
Product Specification Section
STMicroelectronics STGB15M65DF2 - Technical Attributes
Attributes Table
| CE Voltage-Max: | 650V |
| Collector Current @ 25C: | 30A |
| Power Dissipation-Tot: | 136W |
| Gate - Emitter Voltage: | 20V |
| Pulsed Collector Current: | 60A |
| Collector - Emitter Saturation Voltage: | 1.55V |
| Turn-on Delay Time: | 24ns |
| Turn-off Delay Time: | 93ns |
| Qg Gate Charge: | 45nC |
| Reverse Recovery Time-Max: | 142ns |
| Leakage Current: | 250nA |
| Input Capacitance: | 1250pF |
| Thermal Resistance: | 62.5°C/W |
| Operating Temp Range: | -55°C to +175°C |
| No of Terminals: | 3 |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Unit Price
1,000
$0.765
2,000
$0.755
3,000
$0.75
4,000
$0.745
5,000+
$0.73
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount