
Manufacturer Part #
STGWT30H65FB
HB Series 650 V 30 A High Speed Trench Gate Field-Stop IGBT - TO-3P
Product Specification Section
STMicroelectronics STGWT30H65FB - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Obsolete
Obsolete
STMicroelectronics STGWT30H65FB - Technical Attributes
Attributes Table
CE Voltage-Max: | 650V |
Collector Current @ 25C: | 60A |
Power Dissipation-Tot: | 260W |
Gate - Emitter Voltage: | 20V |
Pulsed Collector Current: | 120A |
Collector - Emitter Saturation Voltage: | 1.55V |
Turn-on Delay Time: | 37ns |
Turn-off Delay Time: | 146ns |
Qg Gate Charge: | 149nC |
Leakage Current: | 250nA |
Input Capacitance: | 3659pF |
Thermal Resistance: | 50°C/W |
Operating Temp Range: | -55°C to +175°C |
No of Terminals: | 3 |
Package Style: | TO-3P |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
30
$1.49
120
$1.46
450
$1.44
750
$1.43
1,500+
$1.40
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-3P
Mounting Method:
Through Hole