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STMicroelectronics | STGWT30H65FB

Manufacturer Part #

STGWT30H65FB

HB Series 650 V 30 A High Speed Trench Gate Field-Stop IGBT - TO-3P

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1426
Product Specification Section
STMicroelectronics STGWT30H65FB - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 60A
Power Dissipation-Tot: 260W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 120A
Collector - Emitter Saturation Voltage: 1.55V
Turn-on Delay Time: 37ns
Turn-off Delay Time: 146ns
Qg Gate Charge: 149nC
Leakage Current: 250nA
Input Capacitance: 3659pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-3P
Mounting Method: Through Hole
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
30
Multiple Of:
30
Total
$44.70
USD
Quantity
Unit Price
30
$1.49
120
$1.47
600
$1.44
1,200
$1.43
3,750+
$1.40
Product Variant Information section