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STMicroelectronics | STGWT60H65DFB

Manufacturer Part #

STGWT60H65DFB

STGWT60H65DFB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STGWT60H65DFB - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 375W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 240A
Collector - Emitter Saturation Voltage: 1.6V
Turn-on Delay Time: 66ns
Turn-off Delay Time: 210ns
Qg Gate Charge: 306nC
Reverse Recovery Time-Max: 60ns
Leakage Current: 250nA
Input Capacitance: 7792pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-3P
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
22 Weeks
Minimum Order:
300
Multiple Of:
30
Total
$576.00
USD
Quantity
Unit Price
30
$1.95
120
$1.92
450
$1.89
1,200
$1.87
3,000+
$1.84
Product Variant Information section