Manufacturer Part #
AFT09MS007NT1
AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2
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| Mfr. Name: | NXP | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Reel Mounting Method:Surface Mount |
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Product Specification Section
NXP AFT09MS007NT1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Rated Power Dissipation: | 114W |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Operating Temp Range: | -40°C to +150°C |
| Gate Source Threshold: | 2.1V |
| Input Capacitance: | 107pF |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
1,000+
$3.04
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Mounting Method:
Surface Mount