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Infineon | BSC040N08NS5ATMA1

Manufacturer Part #

BSC040N08NS5ATMA1

Single N-Channel 80 V 4 mOhm 54 nC OptiMOS™ Power Mosfet - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
Infineon BSC040N08NS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 4mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 54nC
Gate-Source Voltage-Max [Vgss]: 3.8V
Drain Current: 100A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 25ns
Rise Time: 8ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.8V
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
10,000
USA:
10,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,250.00
USD
Quantity
Unit Price
5,000
$0.65
10,000+
$0.635
Product Variant Information section