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Manufacturer Part #

BSC047N08NS3GATMA1

Single N-Channel 80 V 4.7 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon BSC047N08NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 4.7mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 52nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$5,650.00
USD
Quantity
Unit Price
5,000+
$1.13