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Infineon Technologies | BSP613PH6327XTSA1

Manufacturer Part #

BSP613PH6327XTSA1

Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Small Signal Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies BSP613PH6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 130mΩ
Rated Power Dissipation: 1.8W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.9A
Turn-on Delay Time: 6.7ns
Turn-off Delay Time: 26ns
Rise Time: 9ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 715pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$535.00
USD
Quantity
Unit Price
1,000
$0.535
2,000
$0.53
3,000+
$0.52
Product Variant Information section