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Infineon | BSZ097N04LSGATMA1

Manufacturer Part #

BSZ097N04LSGATMA1

Single N-Channel 40 V 9.7 mOhm 18 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2349
Product Specification Section
Infineon BSZ097N04LSGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 9.7mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 18nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 16ns
Rise Time: 2.4ns
Fall Time: 2.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 1400pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
565,000
USA:
565,000
On Order:Order inventroy details
165,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,350.00
USD
Quantity
Unit Price
5,000
$0.27
10,000
$0.265
25,000+
$0.26
Product Variant Information section