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Diodes Incorporated | DMN2023UCB4-7

Manufacturer Part #

DMN2023UCB4-7

N-Channel 24 V 26 mΩ 29 nC SMT Enhancement Mode Mosfet - X1-WLB1818-4

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN2023UCB4-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Rated Power Dissipation: 1.45W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: 12V
Turn-on Delay Time: 10ns
Turn-off Delay Time: 75ns
Rise Time: 20ns
Fall Time: 29ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.3V
Input Capacitance: 2564pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$720.00
USD
Quantity
Unit Price
3,000
$0.24
6,000
$0.235
15,000+
$0.23
Product Variant Information section