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Diodes Incorporated | DMN3190LDW-7

Manufacturer Part #

DMN3190LDW-7

DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2307
Product Specification Section
Diodes Incorporated DMN3190LDW-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 320|mW
Qg Gate Charge: 2nC
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$207.30
USD
Quantity
Unit Price
3,000
$0.0691
9,000
$0.0674
15,000
$0.0667
60,000
$0.0647
90,000+
$0.0634
Product Variant Information section